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| P Channel Enchancement Mode MOSFET -3.5A DESCRIPTION ST2305 The ST2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 3 FEATURE -10V/-3.5A, RDS(ON) = 50m-ohm D G 1 1.Gate 2.Source S 2 3.Drain 3 @VGS = -4.5V -10V/-3.0A, RDS(ON) = 70m-ohm @VGS = -2.5V -10V/-2.0A, RDS(ON)= 105m-ohm @VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design S05YA 1 2 A: Process Code S: Subcontractor Y: Year Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 P Channel Enchancement Mode MOSFET -3.5A ST2305 ABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150J ) TA=25J TA=70J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25J TA=70J Symbol VDSS VGSS ID IDM IS PD TJ TSTG Rc JA Typical -10 +/-12 -3.5 -2.8 -10 -1.6 1.25 0.8 150 -55/150 120 Unit V V A A A W J J J /W STANSON TECHNOLOGY \ 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 2 P Channel Enchancement Mode MOSFET -3.5A ST2305 ELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Symbol Condition Min Typ Max Unit -10 -1.5 V V V(BR)DSS VGS=0V,ID=-250uA VGS(th) IGSS VDS=VGS,ID=-250uA -0.45 VDS=0V,VGS=+/-12V 100 nA -1 -10 -6 -3 uA A 0.045 0.05 0.55 0.07 [ 0.09 0.105 8.5 S -0.8 -1.2 10 2 2 1200 300 210 13 20 42 20 12 nC V Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time VDS=-20V,VGS=0V IDSS VDS=-20V,VGS=0V TJ=55J ID(on) VDSO -5V,VGS=-4.5V VDSO -5V,VGS=-2.5V RDS(on) VGS=-4.5V,ID=-3.5A VGS=-2.5V,ID=-2.0A VGS=-1.8V,ID=-2.0A VDS=-5V,ID=-3.5V gfs VSD Qg Qgs Qgd Ciss Coss Crss IS=-1.6A,VGS=0V VDS=-10V,VGS=-4.5V IDY -3.5A VDS=-10V,VGS=0V F=1MHz pF 25 35 nS 70 35 td(on) tr td(off) tf VDD=-10V,RL=6[ ID=-1.0A,VGEN=-4.5V RG=6[ STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 3 P Channel Enchancement Mode MOSFET -3.5A SOT-23-3L PACKAGE OUTLINE ST2305 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 4 P Channel Enchancement Mode MOSFET -3.5A ST2305 TYPICAL CHARACTERICTICS (25J Unless noted) Page 5 P Channel Enchancement Mode MOSFET -3.5A ST2305 TYPICAL CHARACTERICTICS (25J Unless noted) Page 6 |
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